* 23 A, 30 V RDS(ON) = 5.5 mΩ @ VGS = 10 V RDS(ON) = 6.5 mΩ @ VGS = 4.5 V
* High performance trench technology for extremely low RDS(ON)
* High power and curr.
* Synchronous rectifier
* DC/DC converter
5 6 7 8
Bottom-side Drain Contact
4 3 2 1
Absolute Maximum Ratings.
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, provi.
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